• DocumentCode
    1816653
  • Title

    How non-invasive are metal nano-apertures on a semiconductor quantum well?

  • Author

    Hetzler, J. ; Wegener, M. ; Khitrova, G. ; Gibbs, H.M.

  • Author_Institution
    Inst. fur Angewandte Phys., Karlsruhe Univ., Germany
  • fYear
    2001
  • fDate
    11-11 May 2001
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    Summary form only given. Metal apertures, with diameters down to 100 nm, on semiconductor quantum well (QW) samples have extensively been used to obtain subwavelength optical resolution in quantum dot experiments, e.g. When preparing such samples for time-resolved experiments, we have noticed that the optical properties of the semiconductor film underneath the metal aperture do not remain unchanged. Our investigations have shown (a) that this effect is intrinsic for a QW near the surface and (b) that the interplay of optically excited carriers and the built-in electrostatic potential well underneath the aperture leads to characteristic ring structures in luminescence images.
  • Keywords
    electric potential; metallic thin films; nanostructured materials; photoluminescence; semiconductor quantum wells; GaAs; built-in electrostatic potential well; luminescence images; metal nano-apertures; optical properties; optically excited carriers; quantum dot experiments; ring structures; semiconductor film; semiconductor quantum well; subwavelength optical resolution; time-resolved experiments; Apertures; Energy exchange; Gold; Optical films; Optical scattering; Optical surface waves; Particle scattering; Plasmons; Quantum dots; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-663-X
  • Type

    conf

  • DOI
    10.1109/QELS.2001.961837
  • Filename
    961837