DocumentCode
1816653
Title
How non-invasive are metal nano-apertures on a semiconductor quantum well?
Author
Hetzler, J. ; Wegener, M. ; Khitrova, G. ; Gibbs, H.M.
Author_Institution
Inst. fur Angewandte Phys., Karlsruhe Univ., Germany
fYear
2001
fDate
11-11 May 2001
Firstpage
50
Lastpage
51
Abstract
Summary form only given. Metal apertures, with diameters down to 100 nm, on semiconductor quantum well (QW) samples have extensively been used to obtain subwavelength optical resolution in quantum dot experiments, e.g. When preparing such samples for time-resolved experiments, we have noticed that the optical properties of the semiconductor film underneath the metal aperture do not remain unchanged. Our investigations have shown (a) that this effect is intrinsic for a QW near the surface and (b) that the interplay of optically excited carriers and the built-in electrostatic potential well underneath the aperture leads to characteristic ring structures in luminescence images.
Keywords
electric potential; metallic thin films; nanostructured materials; photoluminescence; semiconductor quantum wells; GaAs; built-in electrostatic potential well; luminescence images; metal nano-apertures; optical properties; optically excited carriers; quantum dot experiments; ring structures; semiconductor film; semiconductor quantum well; subwavelength optical resolution; time-resolved experiments; Apertures; Energy exchange; Gold; Optical films; Optical scattering; Optical surface waves; Particle scattering; Plasmons; Quantum dots; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-663-X
Type
conf
DOI
10.1109/QELS.2001.961837
Filename
961837
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