Integration of high voltage transistors into a 1.5 micron CMOS process for LCD driver applications

High-voltage (HV) NMOS and PMOS devices have been integrated into a 1.5-μm CMOS process which is in volume production. The high-voltage devices add minimal masking steps and do not compromise the standard CMOS devices in the flow. The HV transistors have been optimized for either 25 V or 45 V operation. Optimized transistors can withstand 45 V on both the drain and gate electrodes. It is concluded that this marriage of standard 1.5-μm CMOS with HV CMOS is ideal for LCD (liquid crystal display) driver applications