Electrical performance at high temperature and surge current of 1.2 kV power rectifiers: Comparison between Si PiN, 4H-SiC Schottky and JBS diodes

Author

Millán, J. ; Banu, V. ; Brosselard, P. ; Jordà, X. ; Pérez-Tomás, A. ; Godignon, P.

Author_Institution

CNM-IMB-CSIC, Campus Univ. Autonoma de Barcelona, Barcelona

Volume

1

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

53

Lastpage

59

Abstract

A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers were characterized in the 25degC-300degC range, while the Si-PiN was tested up to 200degC due to the Si temperature limitation. 4H-SiC rectifiers exhibited superior temperature performances and their design can be adapted to a specific application. Surge current tests were also performed on both SiC and Si devices.

Keywords

Schottky diodes; p-i-n diodes; power semiconductor diodes; rectifying circuits; silicon compounds; surges; JBS diodes; Schottky diode; SiC; power rectifiers; surge current testing; temperature 25 degC to 300 degC; voltage 1.2 kV; Anodes; Performance evaluation; Rectifiers; Schottky diodes; Semiconductor diodes; Silicon carbide; Surges; Temperature distribution; Testing; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703326

Filename

4703326