1.5 V high speed read operation and low power consumption circuit technology for EPROM and flash-EEPROM

Author

Matsumoto, Osamu ; Miki, Kazuhiko ; Mizutani, Takahide ; Tamaoki, Masashi ; Wada, Akira ; Sato, Mitsuo

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1993

fDate

9-12 May 1993

Abstract

A very low voltage (1.5 V) read operation and low power consumption EPROM (electrically programmable read-only memory) has been integrated into a 0.8 μm CMOS process for consumer-oriented ASIC (application-specific integrated circuit) applications. These characteristics are accomplished by a new dynamic read circuit which consists of a flip-flop sense amplifier and a word-line booster circuit. High-speed read cycle time of 150 ns at 2-V and a wide operating voltage range from 1.5-V to 6-V are achieved. This circuit technology is applicable to Flash-EEPROM (electrically erasable PROM). An 8-bit microcontroller with 60 K-byte EPROM was developed using this technology. It is suitable for a battery operating system supplied minimum voltage of 1.8-V by two nickel-cadmium batteries

Keywords

EPROM; 0.8 micron; 1.5 V; 60 Kbyte; CMOS process; EPROM; battery operating system; consumer-oriented ASIC; flash-EEPROM; flip-flop sense amplifier; high speed read operation; low power consumption; microcontroller; wide operating voltage range; word-line booster circuit; Application specific integrated circuits; Batteries; CMOS process; EPROM; Energy consumption; Flip-flops; Integrated circuit technology; Low voltage; Microcontrollers; PROM;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1993., Proceedings of the IEEE 1993

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0826-3

Type

conf

DOI

10.1109/CICC.1993.590771

Filename

590771