Cathodoluminescence characterisation of vapour transport grown ZnO structures

Author

Foley, Matthew ; Ton-That, Cuong ; Phillips, Matthew R.

Author_Institution

Dept. of Phys. & Adv. Mater., Univ. of Technol. Sydney, Sydney, NSW, Australia

fYear

2010

fDate

22-26 Feb. 2010

Firstpage

207

Lastpage

209

Abstract

ZnO structures grown under controlled vapour-phase transport growth conditions were characterised by electron microscopy and high-resolution cathodoluminescence techniques. Variations in the defect related emission and morphology were observed to be dependent on the distance from the source material. Annealing of grown structures under oxygen eliminated the defect emission. These experimental observations suggest that oxygen deficiency in ZnO is linked to the defect related emission, and that defect emission is strongly influenced by the oxygen gas content during vapour transport growth.

Keywords

II-VI semiconductors; annealing; cathodoluminescence; crystal growth from vapour; electron microscopy; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO; annealing; cathodoluminescence characterisation; controlled vapour-phase transport growth conditions; defect emission; electron microscopy technique; high-resolution cathodoluminescence technique; oxygen deficiency; oxygen gas content; source material; vapour transport grown ZnO structures; Annealing; Morphology; Nanowires; Substrates; Zinc oxide; Cathodoluminescence; Defects; Vapour-phase growth; ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology (ICONN), 2010 International Conference on

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4244-5261-3

Electronic_ISBN

978-1-4244-5262-0

Type

conf

DOI

10.1109/ICONN.2010.6045254

Filename

6045254