• DocumentCode
    1817514
  • Title

    Modeling of trap discharging processes in Multiple Quantum Well structures

  • Author

    Ciurea, M.L. ; Iancu, V. ; Stavarache, I. ; Lepadatu, A.M. ; Rusnac, E.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Buchares
  • Volume
    1
  • fYear
    2008
  • fDate
    13-15 Oct. 2008
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.
  • Keywords
    buffer layers; elemental semiconductors; nanostructured materials; semiconductor quantum wells; silicon; tunnelling; CaF2; Si; buffer layers; displacement currents; multiple quantum well nanostructures; nanocrystalline silicon; trap discharging process; tunneling; Buffer layers; Electrodes; Heating; Nanostructured materials; Nanostructures; Physics; Quantum well devices; Silicon; Substrates; Temperature dependence; nanocrystalline silicon; traps;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2008. CAS 2008. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-2004-9
  • Type

    conf

  • DOI
    10.1109/SMICND.2008.4703332
  • Filename
    4703332
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1817514