Electrical modeling for laser testing with different pulse durations

Author

Douin, A. ; Pouget, V. ; Lewis, D. ; Fouillat, P. ; Perdu, P.

Author_Institution

IXL, Bordeaux Univ., Talence, France

fYear

2005

fDate

6-8 July 2005

Firstpage

9

Lastpage

13

Abstract

This paper presents a simple electrical model of laser-induced currents in a single MOS transistor for different laser pulse durations. This model is validated by mixed-mode device simulations of a laser-induced fault in an SRAM cell for different laser pulse durations ranging from 100fs to 10ns. This model can be used for netlist level simulation of pulsed laser online testing in the context of radiation hardening, semi-invasive attacks, or more generally, hardware level fault injection techniques.

Keywords

MOSFET; SRAM chips; failure analysis; laser materials processing; semiconductor device models; SRAM cell; different pulse durations; electrical modeling; hardware level fault injection; laser testing; laser-induced currents; laser-induced fault; mixed-mode device simulations; netlist level simulation; pulsed laser online testing; radiation hardening; semi-invasive attacks; single MOS transistor; Circuit faults; Circuit testing; Laser beams; Laser modes; Optical propagation; Optical pulses; Photoconductivity; Random access memory; Semiconductor lasers; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

On-Line Testing Symposium, 2005. IOLTS 2005. 11th IEEE International

Print_ISBN

0-7695-2406-0

Type

conf

DOI

10.1109/IOLTS.2005.27

Filename

1498122