Recombination properties of ZnIn2S4:Cu single crystals

Author

Zhitar, V.F. ; Pavlenko, V.I. ; Arama, E.D. ; Shemyakova, T.D.

Author_Institution

Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau

Volume

2

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

241

Lastpage

244

Abstract

Recombination characteristics of ZnIn₂S₄ single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20degC are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states.

Keywords

carrier lifetime; copper; deep levels; doping profiles; impurities; indium compounds; photoconductivity; photoluminescence; semiconductor materials; zinc compounds; ZnIn₂S₄:Cu; copper concentration; copper impurity; deep levels; direct-gap semiconductor; excitation spectra; luminescence; photoconductivity; photoluminescence; radiation transitions; recombination properties; temperature 20 C; Copper; Crystallization; Crystals; Impurities; Laser excitation; Luminescence; Photoconductivity; Power engineering and energy; Radiative recombination; Semiconductor device doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703391

Filename

4703391