• DocumentCode
    1819301
  • Title

    Micro-scale Cu metallization on polyimide substrate for high-speed interconnects

  • Author

    Ya-Hui Tseng ; Yu-Jung Huang ; Ming-Kun Chen ; Yi-Lung Lin

  • Author_Institution
    Dept. of Electron. Eng., I-Shou Univ. Kaohsiung, Kaohsiung, Taiwan
  • fYear
    2012
  • fDate
    18-20 Nov. 2012
  • Firstpage
    139
  • Lastpage
    140
  • Abstract
    The present study can be applicable to fine wire interconnections, particularly for high-speed solutions in 3D packaging. The fine traces with 50 micron pitch (25 ¼m line/space) built on a flexible 50 micron thick polyimide film using wet fabrication process are reported in this paper. The thick copper (Cu) layer was obtained from the Cu plating process using evaporated ultra-thin layer of Cu as the adhesion layer between Cu and a Polyimide (PI). The fabricated fine-pitch pattern is inspected for further failure analysis using scanning electron microscope (SEM) and energy-dispersive spectrometry (EDS) technologies. The experiment is conducted to study the effect of the process parameters on the Cu film surface properties. The results obtained in this work can be applied to the fabrication of flexible high-speed interconnection devices.
  • Keywords
    X-ray chemical analysis; copper; electroplating; failure analysis; fine-pitch technology; interconnections; metallisation; polymer films; scanning electron microscopy; 3D packaging; Cu; EDS technology; PI; adhesion layer; copper film surface properties; copper plating process; energy-dispersive spectrometry technology; evaporated ultrathin layer; fabricated fine-pitch pattern; failure analysis; fine wire interconnections; flexible high-speed interconnection devices; flexible thick polyimide film; microscale copper metallization; polyimide substrate; scanning electron microscope; size 50 micron; wet fabrication process; energy-dispersive spectrometry (EDS); high-speed interconnection; plating; polyimides (PI); scanning electron microscope (SEM);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Global High Tech Congress on Electronics (GHTCE), 2012 IEEE
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4673-5086-0
  • Type

    conf

  • DOI
    10.1109/GHTCE.2012.6490140
  • Filename
    6490140