Effects of α-particles irradiation on polycrystalline silicon thin film transistors

Author

Michalas, L. ; Papaioannou, G.J. ; Voutsas, A.T.

Author_Institution

Phys. Dept., Univ. of Athens, Athens

Volume

2

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

301

Lastpage

304

Abstract

The effects of alpha-particles irradiation on the electrical properties of poly-Si TFTs are investigated, through the temperature analysis of the transfer characteristics. As indicated by the thermally activated parameters, generation of states deep in the band gap usually attributed to dangling or floating bonds, is responsible for the device degradation. Therefore the OFF state leakage current and the subthreshold swing were found to increase, while the carrierspsila mobility to decrease with the radiation fluence. Furthermore a negative threshold voltage shift is observed attributed to positively charged oxygen vacancies in SiO₂ introduced by irradiation.

Keywords

energy gap; radiation effects; thin film transistors; alpha-particles irradiation; band gap; polycrystalline silicon thin film transistors; temperature analysis; Crystallization; Dielectric thin films; Leakage current; Photonic band gap; Semiconductor films; Silicon; Solid state circuits; Temperature distribution; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2008. CAS 2008. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-2004-9

Type

conf

DOI

10.1109/SMICND.2008.4703409

Filename

4703409