Biexciton dephasing in a semiconductor microcavity

Author

Borri, P. ; Langbein, W. ; Woggon, U. ; Jensen, J.R. ; Hvam, J.M.

Author_Institution

Dortmund Univ., Germany

fYear

2001

fDate

11-11 May 2001

Firstpage

148

Lastpage

149

Abstract

Summary form only given. The experimental observation of biexcitons in microcavities has been addressed recently. A well-resolved polariton-biexciton transition was observed in a high-quality GaAs single quantum well (QW) /spl lambda/-microcavity of 25 nm well width using a pump-probe experiment. In this microcavity the heavy-hole (HH) vacuum Rabi splitting is 3.6 meV, more than three times larger than the biexciton binding energy in the bare QW (1.1 meV). Due to the narrow linewidth of the polariton resonances, a well-resolved pump-induced optical absorption associated with biexcitons was observed. In this work we investigate the coherent properties of the biexciton in the same structure using a two-beam four-wave mixing (FWM) experiment at 10 K.

Keywords

III-V semiconductors; biexcitons; gallium arsenide; micro-optics; multiwave mixing; optical pumping; polaritons; semiconductor quantum wells; spectral line breadth; 1.1 meV; 10 K; 25 nm; GaAs; biexciton binding energy; biexciton dephasing; coherent properties; exciting pulses; heavy-hole vacuum Rabi splitting; high-quality GaAs single quantum well microcavity; narrow linewidth; polariton-biexciton transition; pump-induced optical absorption; pump-probe experiment; semiconductor microcavity; two-beam four-wave mixing; Elementary particle vacuum; Four-wave mixing; Microcavities; Nonlinear optics; Optical mixing; Optical polarization; Optical pumping; Periodic structures; Pulse measurements; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-663-X

Type

conf

DOI

10.1109/QELS.2001.961977

Filename

961977