A compact charge-based physical model for AlGaN/GaN HEMTs

Author

Yigletu, F.M. ; Iñiguez, Benjamin ; Khandelwal, Sourabh ; Fjeldly, T.A.

Author_Institution

Dept. of Electr. Electron. & Autom. Eng., Univ. Rovira i Virgili, Tarragona, Spain

fYear

2013

fDate

20-20 Jan. 2013

Firstpage

103

Lastpage

105

Abstract

This work presents a physical compact model for AlGaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but considering only a single energy level. The approach resulted in an accurate and simple current model. The model covers all the different operation regions of a device. Excellent agreements with measured I-V characteristics of a device have showed the validation of the model.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; power transistors; semiconductor device models; two-dimensional electron gas; 2DEG channel; AlGaN-GaN; HEMT devices; I-V characteristics; compact charge-based physical model; drain current; model validation; simple current model; single energy level; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Logic gates; MODFETs; Semiconductor device modeling; HEMTs; power amplifiers; power transistors; semiconductor device modeling; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2013 IEEE Topical Conference on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4673-2915-6

Electronic_ISBN

978-1-4673-2931-6

Type

conf

DOI

10.1109/PAWR.2013.6490203

Filename

6490203