DocumentCode
1821287
Title
High volume applications for GaAs microwave and millimeter-wave ICs in military systems
Author
McQuiddy, D.N., Jr.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1989
fDate
22-25 Oct. 1989
Firstpage
3
Lastpage
6
Abstract
An assessment of the military need for the various systems and the requisite affordability threshold is discussed. Existing military systems can be modified to benefit from GaAs IC insertion. The modifications can be accomplished by either of two methods. Both can present problems to slow the insertion process and to add unexpected cost. On the other hand, insertion into systems under development can be accomplished in a relatively straightforward manner. Experience acquired from current insertion activities is described for both retrofit and development efforts.<>
Keywords
III-V semiconductors; MMIC; gallium arsenide; military equipment; military systems; GaAs; MMIC; affordability threshold; high volume applications; military systems; millimeter-wave ICs; monolithic microwave IC; Availability; Costs; Gallium arsenide; MMICs; Manufacturing processes; Millimeter wave technology; Phased arrays; Production; Semiconductor device manufacture; Weapons;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/GAAS.1989.69281
Filename
69281
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