DocumentCode
1822159
Title
Radiation damage studies of DO silicon sensors for Run IIb
Author
Lipton, Ronald
Author_Institution
Fermilab, USA
Volume
1
fYear
2003
fDate
19-25 Oct. 2003
Firstpage
629
Abstract
The DO Silicon Microstrip Tracker has been operating for two years in the DO experiment at Fermilab. The existing silicon tracking system has limited lifetime to microdischarge effects at high bias voltage. Radiation studies of the current detector are described. We describe the design of the RunIIb replacement and discuss irradiations performed at Kansas State University. The hardness factor is found to be 40% lower than the value calculated from non ionizing energy loss scaling.
Keywords
radiation hardening (electronics); silicon radiation detectors; DO Silicon Microstrip Tracker; Fermilab; Run IIb; Si; Si sensor; radiation damage; Annealing; Energy loss; Microstrip; Neutrons; Photodiodes; Radiation detectors; Silicon; System testing; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-8257-9
Type
conf
DOI
10.1109/NSSMIC.2003.1352120
Filename
1352120
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