• DocumentCode
    1823014
  • Title

    Microwave nonlinearities in Ge/Si avalanche photodiodes having a gain-bandwidth product of 300 GHz

  • Author

    Piels, M. ; Ramaswamy, A. ; Zaoui, W. Sfar ; Bowers, J.E. ; Kang, Y. ; Morse, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
  • fYear
    2009
  • fDate
    22-26 March 2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The nonlinearity of a 300 GHz gain bandwidth separate absorption charge multiplication (SACM) Ge/Si avalanche photodiode was examined experimentally for varying multiplication factors. The maximum second order dynamic range was 84.8 dB-Hzfrac12. The largest third order dynamic range was 101.5 dB-Hz2/3.
  • Keywords
    Ge-Si alloys; avalanche photodiodes; millimetre wave devices; GeSi; avalanche photodiodes; frequency 300 GHz; microwave nonlinearities; separate absorption charge multiplication; Absorption; Avalanche photodiodes; Bandwidth; Dynamic range; Frequency division multiplexing; High speed optical techniques; Linearity; Optical distortion; Optical receivers; Optical sensors; (040.1345) Avalanche photodiodes; (060.5625) Radio frequency photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    978-1-4244-2606-5
  • Electronic_ISBN
    978-1-55752-865-0
  • Type

    conf

  • Filename
    5032582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1823014