Monte Carlo simulation of GaAs nanostructure growth by droplet epitaxy

Author

Suprunets, Anastasiya G. ; Vasilenko, Maxim A. ; Shwartz, Nataliya L.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2013

fDate

1-5 July 2013

Firstpage

46

Lastpage

48

Abstract

A kinetic Monte Carlo model of droplet epitaxy is suggested. Proposed model was used for analysis of mechanisms of GaAs nanostructure formation during crystallization of Ga drops in arsenic flux. Depending on temperature and arsenic flux intensity different shapes of nanostructures can be achieved. A range of model growth conditions corresponding to core-shell compact clusters, crystal dots, nanoholes and nanorings was determined.

Keywords

III-V semiconductors; Monte Carlo methods; epitaxial growth; gallium arsenide; nanofabrication; nanostructured materials; semiconductor growth; GaAs; arsenic flux; core-shell compact clusters; crystal dots; crystallization; droplet epitaxy; kinetic Monte Carlo simulation; nanoholes; nanorings; nanostructure; Crystallization; Epitaxial growth; Gallium; Gallium arsenide; Monte Carlo methods; Semiconductor process modeling; Substrates; GaAs; droplet epitaxy; nanostructures; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-0761-8

Type

conf

DOI

10.1109/EDM.2013.6641937

Filename

6641937