DocumentCode
1825712
Title
Optical properties of quantum wells driven by a terahertz electric field
Author
Maslov, A.V. ; Citrin, D.S.
Author_Institution
Dept. of Phys., Washington State Univ., Pullman, WA, USA
fYear
2001
fDate
11-11 May 2001
Firstpage
256
Abstract
Summary form only given. A dc electric field oriented in the growth direction of a quantum well (QW) changes the optical absorption and thus enables electrically driven optical modulators. Though the electroabsorption change is intrinsically very fast mechanism (since it does not involve change in carrier density), the device operation speed is ultimately limited by its electronic components. To increase the operation speed, the modulation by a terahertz (THz) electric field, such as provided by a free-electron laser or table-top sources, can be used. Such a THz field tuned at resonance with the intersubband transitions can induce large changes in the interband optical absorption. Moreover, the modulation by a THz field gives rise to optical emission at frequencies that differ from the frequency of the incident optical field by an integer number of the THz frequencies. This nonlinear optical/THz photon mixing has potential application in frequency shifting devices.Recently, we studied the optical properties of a THz driven QW resolving several subbands, both in the conduction and valence bands, using the polarization semiconductor Bloch equations in the low density limit.
Keywords
conduction bands; electro-optical modulation; electroabsorption; high-speed optical techniques; semiconductor quantum wells; submillimetre wave devices; valence bands; THz driven QW; THz electric field; conduction bands; dc electric field; electrically driven optical modulators; electroabsorption change; frequency shifting devices; growth direction; incident optical field; interband optical absorption; low density limit; operation speed; optical absorption; optical/THz photon mixing; polarization semiconductor Bloch equations; quantum well; subbands; terahertz electric field; valence bands; very fast mechanism; Absorption; Charge carrier density; Electronic components; Frequency; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical mixing; Optical modulation; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-663-X
Type
conf
DOI
10.1109/QELS.2001.962214
Filename
962214
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