• DocumentCode
    182620
  • Title

    An all-GaN differential driver for a 60 V GaN-based power amplifier with 1 GHz switching frequency

  • Author

    El Mahalawy, Mohamed ; Patten, Scott ; Landt, Don ; Ward, Rabab ; Walker, A. ; Fayed, Ayman

  • Author_Institution
    Adv. Technol. Center, Rockwell Collins, Cedar Rapids, IA, USA
  • fYear
    2014
  • fDate
    6-6 June 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    An all-GaN gate-drive circuit is proposed and integrated in the same MMIC with a 60V GaN switching PA using 0.25μm depletion-mode process. The driver employs a multi-stage differential amplifier to operate a push-pull topology for switching the PA´s power device with much shorter transition times than other known gate-drive topologies, and thus allows for much higher switching frequencies. Measurements show less than 122ps transition times at the PA´s output and a switching frequency up to 1GHz.
  • Keywords
    power amplifiers; radio networks; GaN based power amplifier; GaN differential driver; MMIC; frequency 1 GHz; gate drive topologies; multistage differential amplifier; push pull topology; switching frequencies; switching frequency; Gallium nitride; Impedance; Logic gates; MMICs; Switches; Switching frequency; Topology; GaN technology; Gate Drivers; Switching PAs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/WAMICON.2014.6857740
  • Filename
    6857740