The isothermal dielectric relaxation currents in metal/holmium oxide/metal thin-film capacitors

Author

Wiktorczyk, T.

Author_Institution

Inst. of Phys., Tech. Univ. Wroclaw, Poland

fYear

1999

fDate

1999

Firstpage

135

Lastpage

138

Abstract

In this paper the basic isothermal dielectric relaxation current (IDRC) characteristics of M/Ho₂O₃/M thin film structures measured in the time domain are presented. These characteristics were examined at various applied voltages. The influence of temperature and the insulator thickness was also studied. The charge released during the relaxation process was estimated. Experimental data are discussed taking into account the volume of the insulating film and Schottky barriers formed at the M/I boundaries

Keywords

MIM devices; Schottky barriers; dielectric relaxation; electrets; holmium compounds; thermally stimulated currents; thin film capacitors; time-domain analysis; Ho₂O₃; M/Ho₂O₃/M thin film structures; Schottky barriers; applied voltage; charge release; insulator thickness; isothermal dielectric relaxation currents; metal/holmium oxide/metal thin-film capacitors; temperature dependence; time domain; Current measurement; Dielectric thin films; Isothermal processes; MIM capacitors; Metal-insulator structures; Polarization; Time measurement; Transistors; Voltage; Volume relaxation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on

Conference_Location

Athens

Print_ISBN

0-7803-5025-1

Type

conf

DOI

10.1109/ISE.1999.831963

Filename

831963