Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

Author

Das, N. ; Xue, Y.Y. ; Wang, Y.Q. ; Chu, C.W.

Author_Institution

Dept. of Phys., Univ. of Houston, Houston, TX, USA

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

28

Lastpage

47

Abstract

The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr_0.7Ca_0.3MnO₃) interface has been studied in detail. Dielectric spectroscopy (frequency range ~ 10 Hz-10 Mz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (V_Th) and a very fast `write´ speed (~100 ns or less) with excellent reversibility has been achieved. Detailed kinetics and relaxation studies are conducted with data retention time period of more than 10⁸ sec (~years). Based on the above results, a defect creation/annihilation and lattice rearrangement model for switching has been developed. C-AFM (conductive AFM) has been used to study the nano inhomogeneity of the conductivity of metal-PCMO interface and a more complex percolation model has been outlined.

Keywords

praseodymium compounds; random-access storage; switching circuits; Pr_0.7Ca_0.3MnO₃-Jk; data retention time period; defect creation/annihilation; dielectric spectroscopy; electric pulse induced resistive switching; electrical characterization; lattice rearrangement model; non-volatile memory device; percolation model; resistive memory; voltage threshold; Capacitance; Electric resistance; Electrochemical impedance spectroscopy; Electromigration; Electron traps; Metal-insulator structures; Physics; Semiconductor process modeling; Switches; Thermal resistance; Maxwell Wagner relaxation; O^2- vacancy; Perovskite; dielectric spectroscopy; mesostructure; point defects; resistive memory; transition metal oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-4953-8

Electronic_ISBN

978-1-4244-4954-5

Type

conf

DOI

10.1109/NVMT.2009.5429779

Filename

5429779