DocumentCode
1828700
Title
Yield and productivity improvements through use of advanced dual plasma source for TSV reveal & wafer dicing applications
Author
Barnett, Richard ; Thomas, Dave ; Griffiths, Hefin
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
585
Lastpage
589
Abstract
In summary, it is clear that the deep Si etch requirements for MEMS, through- silicon vias (TSV) , via reveal and dicing have significant common ground and the experience established in any of the fields becomes useful across the others. The Pegasus Rapier has provided many of the benefits needed by users of this technology, with their inception being generated by the relative needs of their complementary markets.
Keywords
elemental semiconductors; etching; micromechanical devices; silicon; three-dimensional integrated circuits; wafer level packaging; MEMS; TSV reveal; deep Si etch requirement; dual plasma source; productivity improvement; through-silicon vias; wafer dicing application; yield improvement; Glass; ISO standards; Plasma sheaths; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location
Singapore
Print_ISBN
978-1-4577-1983-7
Electronic_ISBN
978-1-4577-1981-3
Type
conf
DOI
10.1109/EPTC.2011.6184488
Filename
6184488
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