A 0.15-/spl mu/m GaAs MHEMT transimpedance amplifier IC for 40-Gb/s applications

Author

Campbell, C.F. ; Heins, M.S. ; Kao, M.Y. ; Muir, M.E. ; Carroll, J.M.

Author_Institution

TriQuint Semicond., Richardson, TX, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

79

Abstract

The design and performance of a 0.15-/spl mu/m MHEMT transimpedance amplifier IC suitable for 40-Gb/s receiver applications is presented. Experimental results for the circuit demonstrate 263/spl Omega/ of transimpedance and 42.6 GHz 3dB-bandwidth with 0.075 pF of photodiode capacitance connected at the input. The IC dissipates 180 mW of power from a single +6V supply and has a die area of 0.72 mm/sup 2/.

Keywords

HEMT integrated circuits; III-V semiconductors; gallium arsenide; optical fibre communication; optical receivers; photodiodes; semiconductor device breakdown; 0.075 pF; 0.15 micron; 180 mW; 263 ohm; 40 Gbit/s; 42.6 GHz; 6 V; GaAs; IC power dissipation; MHEMT transimpedance amplifier IC; die area; fiber optic communication systems; optical receiver components; photodiode capacitance; receiver applications; Application specific integrated circuits; Capacitance; Capacitors; Delay; Gallium arsenide; Impedance; Photodiodes; Scattering parameters; Semiconductor device measurement; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011563

Filename

1011563