DocumentCode
1829633
Title
Review of SiGe process technology and its impact on RFIC design
Author
Das, A. ; Huang, M. ; Mondal, J. ; Kaczman, D. ; Shurboff, C. ; Cosentino, S.
Author_Institution
Motorola Inc., Libertyville, IL, USA
Volume
1
fYear
2002
fDate
2-7 June 2002
Firstpage
171
Abstract
In this paper, we review recently published SiGe BiCMOS technologies for RFIC design. Performance and integration trends in SiGe HBT´s are discussed. The performance of passive devices, such as inductors, plays a key role in RF design. We review approaches to realizing high-Q inductor on a Si substrate. Finally, the interaction of HBT performance with design is illustrated through LNA design.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; heterojunction bipolar transistors; inductors; integrated circuit design; integrated circuit technology; reviews; semiconductor materials; HBT performance; LNA design; RFIC design; Si; Si substrate; SiGe; SiGe BiCMOS technologies; SiGe HBTs; SiGe process technology; high-Q inductor; passive devices; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1011586
Filename
1011586
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