Advanced passive devices for enhanced integrated RF circuit performance

Author

Coolbaugh, D. ; Eshun, E. ; Groves, R. ; Hararnel, D. ; Johnson, J. ; Harnmad, A. ; He, Z. ; Ramachandran, V. ; Stein, K. ; St Ongel, S. ; Subbanna, S. ; Wang, D. ; Volant, R. ; Wang, X. ; Watson, K.

Author_Institution

IBM Corp., Essex Junction, VT, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

187

Abstract

State of the art passive devices have been developed for optimum RF circuit performance. These devices include a hyperabrupt junction varactor with tunability (Cmax/Cmin) of 3.3, an accumulation mode MOS varactor, high capacitance nitride metal-insulator-metal capacitors, a BEOL TaN resistor and very high Q inductors with a peak Q of 28 at 3.5 GHz. VCO simulations using several of these elements show a significant reduction in VCO gain variation, phase noise, and power consumption.

Keywords

capacitors; inductors; radiofrequency oscillators; resistors; varactors; voltage-controlled oscillators; 3.5 GHz; BEOL TaN resistor; Q-factor; RF integrated circuit; TaN; VCO simulation; accumulation mode MOS varactor; capacitance; gain variation; hyperabrupt junction varactor; inductor; nitride MIM capacitor; passive device; phase noise; power consumption; tunability; Capacitance; Circuit optimization; Circuit simulation; Inductors; MIM capacitors; Phase noise; Radio frequency; Resistors; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011590

Filename

1011590