• DocumentCode
    1830562
  • Title

    Thickness and roughness measurements in poly(o-methoxyaniline) layer-by-layer films using AFM

  • Author

    Raposo, M. ; Lobo, R.F.M. ; Pereira-da-Silva, M.A. ; Faria, R.M. ; Oliveira, O.N., Jr.

  • fYear
    1999
  • fDate
    1999
  • Firstpage
    533
  • Lastpage
    536
  • Abstract
    Atomic force microscopy (AFM) was employed to monitor the buildup of layer-by-layer films of poly(o-methoxyaniline) (POMA) and poly(ethenesulfonic acid) (PVS) onto several substrates. Using the contact mode of an AFM, we produced a furrow on the film, which was made possible because the film material was less stiff than the substrate and the silicon tip. Film thickness could then be measured using the tapping mode. The thickness and adsorbed amount of POMA/PVS increased linearly after several bilayers had been deposited, while the roughness increased with the number of bilayers until reaching a saturation value. This behavior was attributed to the ability of these polymers to aggregate, which was confirmed by an analysis of grain sizes
  • Keywords
    adsorbed layers; aggregation; atomic force microscopy; conducting polymers; polymer films; self-assembly; surface topography; surface topography measurement; thickness measurement; adsorbed layers; aggregation ability; atomic force microscopy; bilayers; conjugated polymers; contact mode; film buildup; furrow; layer-by-layer films; poly(ethenesulfonic acid); poly(o-methoxyaniline); polyaniline derivative; roughness measurement; saturation value; self-assembly; supramolecular structures; tapping mode; thickness measurement; Aggregates; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Monitoring; Polymers; Semiconductor films; Silicon; Substrates; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on
  • Conference_Location
    Athens
  • Print_ISBN
    0-7803-5025-1
  • Type

    conf

  • DOI
    10.1109/ISE.1999.832102
  • Filename
    832102