• DocumentCode
    183109
  • Title

    A 12mW all-digital PLL based on class-F DCO for 4G phones in 28nm CMOS

  • Author

    Feng-Wei Kuo ; Ron Chen ; Yen, Kyle ; Hsien-Yuan Liao ; Chewn-Pu Jou ; Fu-Lung Hsueh ; Babaie, Masoud ; Staszewski, Robert Bogdan

  • Author_Institution
    TSMC, Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    10-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose a new architecture of an all-digital PLL (ADPLL) for advanced cellular radios that is optimized for 28 nm CMOS. It is based on a wide tuning range, fine-resolution class-F DCO with only switchable metal capacitors and a phase-predictive TDC. The 8mW DCO emits -157 dBc/Hz at 20MHz offset at ~2 GHz, while fully satisfying metal density rules. The 0.4mW TDC clocked at 40MHz achieves PVT-stabilized 6 ps resolution for -108 dBc/Hz in-band phase noise. FREF spur is ultra-low at <;-94 dBc. The ADPLL supports a 2-point modulation and consumes 12mW while occupying 0.22mm2, thus demonstrating both 72% power and 38% area reductions over prior records.
  • Keywords
    4G mobile communication; CMOS digital integrated circuits; cellular radio; digital phase locked loops; phase noise; 2-point modulation; 4G phones; ADPLL architecture; CMOS process; FREF spur; PVT-stabilized resolution; TDC; advanced cellular radios; all-digital PLL; class-F DCO; digitally controlled oscillator; in-band phase noise; metal density rules; phase-predictive TDC; power 0.4 mW; power 12 mW; power 8 mW; size 28 nm; switchable metal capacitors; time 6 ps; wide tuning range fine-resolution class-F DCO; CMOS integrated circuits; Frequency modulation; Metals; Phase locked loops; Phase noise; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4799-3327-3
  • Type

    conf

  • DOI
    10.1109/VLSIC.2014.6858393
  • Filename
    6858393