225 C high temperature silicon-on-insulator (SOI) ASICs for harsh environments

Author

O´Connor, J. Michael ; Tsang, Joseph C. ; McKitterick, John B.

Author_Institution

Microelectron. & Technol. Center, AlliedSignal, Columbia, MD, USA

fYear

1998

fDate

17-19 Sep 1998

Firstpage

2

Lastpage

5

Abstract

Silicon on insulator (SOI) based ASICs enable electronics applications in high temperature ambients of 225 C and above. A brief overview of the technology as well as recent ASIC and standard part performance is presented. Down-hole drilling and monitoring, electric vehicles, distributed engine and flight controls and industrial electric motors are but a few of the many potential applications for high temperature electronics

Keywords

CMOS integrated circuits; application specific integrated circuits; automotive electronics; power MOSFET; power integrated circuits; silicon-on-insulator; 225 C; Si; distributed engine controls; distributed flight controls; down-hole drilling; electric vehicles; harsh environments; high temperature SOI ASICs; high temperature electronics; industrial electric motors; monitoring; Aerospace control; Aerospace electronics; Application specific integrated circuits; Drilling; Electric vehicles; Electronics industry; Engines; Monitoring; Silicon on insulator technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Power Packaging, 1998. IWIPP. Proceedings., IEEE International Workshop on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-5033-2

Type

conf

DOI

10.1109/IWIPP.1998.722239

Filename

722239