Super compact RFIC inductors in 0.18/spl mu/m CMOS with copper interconnects

Author

Feng, H. ; Jelodin, G. ; Gong, K. ; Zhan, R. ; Wu, Q. ; Chen, C. ; Wang, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

553

Abstract

Design of super compact on-chip inductors with deep-shrunk dimension of 22/spl mu/m/spl times/23/spl mu/m, as opposed to several hundreds /spl mu/m by several hundreds /spl mu/m, is reported. Implemented in a 6-metal all-copper 0.18/spl mu/m CMOS process, a flat inductor value of 10nH up to 4GHz, satisfactory to many typical RFIC applications, is achieved. The aggressive shrinkage reduces parasitic capacitance substantially and makes it realistic and cost-effective to realize single-chip RFICs in very deep sub-micron technologies. A new inductor model is proposed for accuracy. A 2.4GHz LNA circuit with on-chip matching using the compact inductor is demonstrated.

Keywords

CMOS integrated circuits; copper; inductors; integrated circuit interconnections; 0.18 micron; 2.4 GHz; 4 GHz; CMOS single chip; Cu; LNA circuit; copper interconnect; deep submicron technology; on-chip matching; parasitic capacitance; super compact RFIC inductor; CMOS technology; Copper; Equivalent circuits; Inductance; Inductors; Integrated circuit interconnections; Mutual coupling; Radiofrequency integrated circuits; Semiconductor device modeling; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011680

Filename

1011680