DocumentCode
1832435
Title
8Gbps CMOS ASK modulator for 60GHz wireless communication
Author
Oncu, Ahmet ; Takano, Kyoya ; Fujishima, Minoru
Author_Institution
Sch. of Frontier Sci., Univ. of Tokyo, Tokyo
fYear
2008
fDate
3-5 Nov. 2008
Firstpage
125
Lastpage
128
Abstract
In this paper we present a millimeter-wave CMOS amplitude-shift-keying (ASK) modulator for 60 GHz wireless communication at greater than 1 Gbps. It is designed using shunt NMOSFET switches between the signal and the ground line of a transmission line. A reduced-switch architecture is used to achieve high speed. The transmission line length between switches is adjusted to achieve high isolation with a reduced number of switches. A 60 GHz millimeter-wave ASK modulator is successfully realized by using a 6-metal 1-poly 90 nm CMOS process. The size of the chip is 0.8 mm times 0.48 mm including the pads. The core size is 0.61 mm times 0.3 mm. The isolation and maximum data rate of the modulator at 60 GHz are measured to be 26.6 dB and 8 Gbps, respectively. The product of the maximum data rate and the isolation of this modulator is 170 GHz, which is the highest value among over-Gbps ASK modulators.
Keywords
CMOS integrated circuits; amplitude shift keying; field effect transistor switches; millimetre wave integrated circuits; modulators; transmission lines; CMOS ASK modulator; bit rate 8 Gbit/s; data rate; frequency 170 GHz; frequency 60 GHz; ground line; isolation; millimeter-wave CMOS amplitude-shift-keying modulator; shunt NMOSFET switches; transmission line; wireless communication; Amplitude modulation; Amplitude shift keying; CMOS process; Communication switching; MOSFET circuits; Millimeter wave communication; Signal design; Switches; Transmission lines; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2008. A-SSCC '08. IEEE Asian
Conference_Location
Fukuoka
Print_ISBN
978-1-4244-2604-1
Electronic_ISBN
978-1-4244-2605-8
Type
conf
DOI
10.1109/ASSCC.2008.4708745
Filename
4708745
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