Porosity effects on coplanar waveguide porous silicon interconnects

Author

Itotia, I.K. ; Drayton, R.F.

Author_Institution

Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

681

Abstract

Oxidized porous silicon (OPS) has the potential to produce low loss designs for high-density RF passive and CMOS integrated circuits. Herein are findings on porosity effects on finite ground coplanar waveguide (FGCPW) lines printed on OPS material up to 50 GHz. At 51% porosity, measured effective dielectric constant data (/spl epsi//sub r,eff/) is approximately 2.8 and is consistent with Bruggeman models. For similar low (low-rho) and high (high-rho) resistivity silicon designs, OPS attenuation (dB/cm) exhibits 78% less loss than low-rho designs with 1.5 and 9.5% less than and greater than, the high-rho design at 10 and 20 GHz, respectively. Furthermore, wideband 50-ohm impedance matching is achieved. These findings, therefore, support consideration of oxidized porous silicon for RFIC design.

Keywords

CMOS integrated circuits; coplanar waveguides; elemental semiconductors; impedance matching; integrated circuit interconnections; permittivity; porous semiconductors; silicon; 10 GHz; 20 GHz; 50 GHz; 50 ohm; Bruggeman model; CMOS integrated circuit; RFIC; Si; dielectric constant; finite ground coplanar waveguide interconnect; high resistivity silicon; impedance matching; low resistivity silicon; oxidized porous silicon; porosity effects; CMOS integrated circuits; Coplanar waveguides; Dielectric constant; Dielectric materials; Dielectric measurements; Integrated circuit interconnections; Integrated circuit measurements; Radio frequency; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011713

Filename

1011713