• DocumentCode
    1834397
  • Title

    Process modeling for sequential build-up of multi-layered structures

  • Author

    Dunne, Rajiv C. ; Sitaraman, Suresh K.

  • Author_Institution
    George W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    1998
  • fDate
    25-28 May 1998
  • Firstpage
    353
  • Lastpage
    361
  • Abstract
    A parametric process modeling approach has been implemented to simulate the sequential build-up of a multilayered substrate. Generalized deformation models with element birth and death are used to activate and deactivate the material layers to simulate substrate fabrication. Using process models, one can determine the warpage stresses at any intermediate stage in the process. This approach is in contrast to the “frozen-view” models employed by many researchers, which are shown to yield overly conservative and sometimes erroneous results, leading to non-optimal design solutions. Residual warpage and axial stress results are presented for the sequential build-up of a complex multi-layered substrate with thin film passives integrated within the HDI (high density interconnect) layers. In addition, a comparison with the results using a frozen-view modeling approach is presented, and an alternate improved substrate processing technique is suggested to eliminate intermediate boards prior to polymer deposition
  • Keywords
    deformation; integrated circuit interconnections; integrated circuit modelling; integrated circuit packaging; internal stresses; HDI; axial stress; deformation models; frozen-view modeling approach; high density interconnect; multi-layered structures; parametric process modeling; polymer deposition; sequential build-up; substrate fabrication; warpage stresses; Costs; Deformable models; Electronics packaging; Fabrication; Polymers; Residual stresses; Substrates; Temperature; Thermal stresses; Thermomechanical processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components & Technology Conference, 1998. 48th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-4526-6
  • Type

    conf

  • DOI
    10.1109/ECTC.1998.678718
  • Filename
    678718