DocumentCode
1835047
Title
The study of the convex corner compensation in anisotropic wet etching of (100) Si in aqueous KOH
Author
Zhang, Qingxin ; Liu, Litian ; Li, Zhijian
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
498
Lastpage
500
Abstract
The method of convex corner compensation with a ⟨100⟩ bar for silicon, presented by G.K. Mayer et al. (1990), has been investigated. The limitations of the method are indicated, and a modified method is proposed
Keywords
compensation; elemental semiconductors; etching; silicon; (100) Si; KOH; Si; anisotropic wet etching; aqueous KOH; convex corner compensation; Anisotropic magnetoresistance; Joining processes; Silicon; Strips; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503330
Filename
503330
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