Properties of metalorganic chemical vapor deposited tantalum nitride thin films

Author

Sun, S.C. ; Tsai, M.H. ; Tsai, C.E. ; Chiu, H.T.

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Taipei, Taiwan

fYear

1995

fDate

24-28 Oct 1995

Firstpage

547

Lastpage

549

Abstract

Low-resistivity tantalum nitride (TaN) films have been successfully realized by low-pressure metalorganic chemical vapor deposition using a new precursor TBTDMT (terbutylimido-tris-dimethylamino tantalum). Data from transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis indicate that 600°C as-deposited films exhibit polycrystalline structure with ⟨200⟩ preferred orientation. CVD TaN films have been investigated as diffusion barriers for Cu and Al interconnections

Keywords

CVD coatings; X-ray diffraction; chemical vapour deposition; diffusion barriers; electrical resistivity; integrated circuit interconnections; leakage currents; metallic thin films; tantalum compounds; thermal stability; transmission electron microscopy; 10 mohmcm to 600 muohmcm; 500 to 650 C; Al interconnections; Al-TaN-Si; Cu interconnections; Cu-TaN-Si; LPCVD; TaN films; X-ray diffraction analysis; diffusion barriers; high thermal stability; low leakage current; low-pressure metalorganic chemical vapor deposition; low-resistivity; polycrystalline structure; preferred orientation; terbutylimido-tris-dimethylamino tantalum; transmission electron microscopy; Chemical vapor deposition; Conductivity; Copper; Metallization; Optical films; Plasma temperature; Sputtering; Substrates; Temperature distribution; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503346

Filename

503346