DocumentCode
1836312
Title
Vacuum ultraviolet-induced and enhanced oxidation of Si and GaAs in N2O
Author
Du, Y.C. ; Hu, Y.M. ; Wang, H. ; Yao, X.W. ; Zhao, Y.C. ; Sun, O.C. ; Li, F.M.
Author_Institution
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
674
Lastpage
676
Abstract
We present a low temperature photo (VUV) enhanced oxidation technique to grow ultra thin dielectric films on Si and GaAs in nitrous oxide (N2O) ambient at low substrate temperature (<500 °C). There is a sharp increase in the oxidation rate of Si and GaAs under VUV irradiation. Auger electron spectroscopy and X-ray photoelectron spectroscopy are used to monitor film composition. The subcutaneous oxidation due to VUV radiation (λ=110-180 nm) relies on a non-thermal mechanism of light enhancement and reactivity of oxidizing species
Keywords
Auger effect; III-V semiconductors; X-ray photoelectron spectra; dielectric thin films; elemental semiconductors; gallium arsenide; oxidation; radiation effects; silicon; 110 to 180 nm; 500 C; Auger electron spectroscopy; GaAs; GaAsO; N2O; N2O ambient; Si; SiO2; VUV enhanced oxidation; VUV irradiation; X-ray photoelectron spectroscopy; film composition; halogen lamp; light enhancement; low substrate temperature; low temperature photooxidation; nonthermal mechanism; oxidation rate; oxidizing species reactivity; subcutaneous oxidation; Cathodes; Dielectric films; Electrochemical impedance spectroscopy; Electrons; Gallium arsenide; Hydrogen; Oxidation; Plasma temperature; Semiconductor films; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503387
Filename
503387
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