Metal side-wall pattern with a supporter for X-ray mask

Author

Xunchun Li ; CHEN, Mengzhen ; Ye, Tianchun ; WANG, Yuling ; SUN, Baoyin ; WANG, Runmei ; Xie, Changqing ; CAO, Zhengya ; ZHU, Zhangzhen

Author_Institution

Microelectron. Res. & Dev. Center, Acad. Sinica, Beijing, China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

677

Lastpage

679

Abstract

A new method for fabricating sub-quarter micron X-ray mask patterns with high aspect ratio for HEMT and MOSFET is proposed. The key point of the method is to make the metal side-wall pattern with a supporter transparent to X-rays. Using the X-ray mask pattern made in the new method, a 93 nm line width positive resist pattern and a 260 nm line width negative resist pattern have been obtained. It is expected that this method could be applied to nanometer X-ray lithography for generation of the patterns of HEMT and MOSFET devices in the near future

Keywords

MOSFET; X-ray masks; high electron mobility transistors; nanotechnology; photoresists; semiconductor technology; 260 nm; 93 nm; HEMT; MOSFET; X-ray mask patterns; X-ray transparency; high aspect ratio; line width; metal side-wall pattern; nanometer X-ray lithography; negative resist pattern; positive resist pattern; supporter; Anisotropic magnetoresistance; Dry etching; Fabrication; Gold; HEMTs; MOSFET circuits; Resists; Silicon; Wet etching; X-ray lithography;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503388

Filename

503388