DocumentCode
1836577
Title
Designing reliable high-power limiter circuits with GaAs PIN diodes
Author
Smith, D.G. ; Heston, D.D. ; Heston, J. ; Heimer, B. ; Decker, K.
Author_Institution
Raytheon Syst. Co., Dallas, TX, USA
Volume
2
fYear
2002
fDate
2-7 June 2002
Firstpage
1245
Abstract
This paper presents the latest GaAs PIN diode rf reliability data. An acceleration factor predicting lifetime as a function of diode perimeter and rf power level is proposed. Power handling measurements of an improved PIN diode layout that provides superior performance for both power handling and small signal loss/bandwidth is presented. Finally the design principles for a high power limiter will be reviewed.
Keywords
III-V semiconductors; circuit reliability; gallium arsenide; limiters; p-i-n diodes; GaAs; GaAs PIN diode; RF power handling; acceleration factor; bandwidth; design technique; high-power limiter circuit; lifetime; reliability; small-signal loss; Circuit testing; Gallium arsenide; Geometry; Power measurement; Power system reliability; Semiconductor diodes; Stress; Switches; Switching circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location
Seattle, WA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7239-5
Type
conf
DOI
10.1109/MWSYM.2002.1011885
Filename
1011885
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