Characterization of the HDP-CVD oxide as interlayer dielectric material for sub-quarter micron CMOS

Author

Kim, Ju Wan ; Lee, Ju Bum ; Hong, Jin Gi ; Hwang, Byung Keun ; Kim, Sung Tae ; Han, Min Soeg

Author_Institution

Samsung Electron. Co. Ltd., Youngin-City, South Korea

fYear

1998

fDate

1-3 Jun 1998

Firstpage

274

Lastpage

276

Abstract

The characteristics and process optimization of high density plasma (HDP) CVD oxide as a wordline to bitline interlayer dielectric (ILD) material in sub-quarter micron CMOS DRAM were investigated. To enhance the gap-filling capability, multi-step deposition of HDP CVD oxide was developed. A self-aligned contact (SAC) scheme could be used with HDP CVD oxide ILD with wide process margin and low thermal budget as compared to conventional methods such as O₃-TEOS undoped silicate glass (USG) and borophosphosilicate glass (BPSG) reflow. Better or comparable performance was obtained with HDP CVD oxide compared to BPSG-reflow due to the low thermal budget

Keywords

CMOS memory circuits; DRAM chips; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; optimisation; plasma CVD; silicon compounds; B2O3-P2O5-SiO2; BPSG; BPSG-reflow; CMOS DRAM; HDP CVD oxide; HDP CVD oxide ILD; HDP-CVD oxide interlayer dielectric material; O₃; O₃-TEOS undoped silicate glass; SiO₂-Si; borophosphosilicate glass reflow; gap-filling capability; high density plasma CVD oxide; multi-step deposition; process margin; process optimization; self-aligned contact scheme; thermal budget; wordline to bitline interlayer dielectric; Chemical vapor deposition; Dielectric materials; Dry etching; Glass; Optical microscopy; Plasma applications; Random access memory; Scanning electron microscopy; Sputtering; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704921

Filename

704921