• DocumentCode
    183738
  • Title

    Degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions

  • Author

    Sasso, G. ; Rinaldi, N. ; Fischer, G.G. ; Heinemann, B.

  • Author_Institution
    DIETI ( Dept. of Electr. Eng. & Inf. Technol.), Univ. Federico II, Naples, Italy
  • fYear
    2014
  • fDate
    Sept. 28 2014-Oct. 1 2014
  • Firstpage
    41
  • Lastpage
    44
  • Abstract
    Hot-carrier induced degradation and post-stress recovery of 240/300 fT/fMAX SiGe HBTs are investigated. The investigation includes the impact of stress conditions and lateral scaling. Self-heating is employed as a means to investigate thermal-induced recovery activation and rate.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; hot carriers; millimetre wave circuits; HBT; SiGe; heterojunction bipolar transistor; high reverse EB stress conditions; hot-carrier induced degradation; lateral scaling; post-stress recovery; thermal-induced recovery activation; Annealing; Degradation; Junctions; Silicon germanium; Stress; Stress measurement; Temperature measurement; SiGe HBT; recovery; reliability; reverse EB stress; self-heating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE
  • Conference_Location
    Coronado, CA
  • Type

    conf

  • DOI
    10.1109/BCTM.2014.6981282
  • Filename
    6981282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=183738