Integration study of benzocyclobutene with CVD-based aluminum metallization

Author

Gundlach, H. ; Knorr, A. ; Nijsten, S. ; Kumar, K. ; Bian, Z. ; Talevi, R. ; Shaffer, E.O. ; Kaloyeros, A.E. ; Geer, R.E.

Author_Institution

Center for Adv. Thin Films, State Univ. of New York, Albany, NY, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

277

Lastpage

279

Abstract

Aluminum/liner binary stacks have been deposited on blanket and patterned films of benzocyclobutene (BCB) polymer to investigate its integration into an all-aluminum multilevel wiring structure. Blanket stacks were characterized for structural properties and reliability. Metallized patterned films were analyzed for gap filling of 0.30 μm trenches. Aluminum was deposited via chemical vapor deposition (CVD). Titanium nitride liners were deposited via collimated reactive sputtering

Keywords

aluminium; chemical vapour deposition; dielectric thin films; encapsulation; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; polymer films; sputter deposition; titanium compounds; 0.3 micron; Al chemical vapor deposition; Al-TiN; CVD-based aluminum metallization; TiN liner collimated reactive sputter deposition; all-aluminum multilevel wiring structure; aluminum/liner binary stacks; benzocyclobutene integration; blanket benzocyclobutene polymer films; blanket stacks; collimated reactive sputtering; gap filling; metallized patterned films; patterned benzocyclobutene polymer films; reliability; structural properties; titanium nitride liners; trenches; Aluminum; Chemical vapor deposition; Collimators; Filling; Metallization; Pattern analysis; Polymer films; Sputtering; Titanium; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704922

Filename

704922