A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

Author

Numata, K. ; Takahashi, Y. ; Maeda, T. ; Hida, H.

Author_Institution

Photonic & Wireless Device Res. Labs., NEC Corp., Ibaraki, Japan

fYear

2002

fDate

3-4 June 2002

Firstpage

141

Lastpage

144

Abstract

We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

Keywords

III-V semiconductors; JFET integrated circuits; antenna accessories; cellular radio; field effect MMIC; gallium arsenide; microwave switches; switching circuits; 0.37 dB; 2.4 V; GSM application; GaAs; GaAs HJFET process; GaAs single-pole dual-throw antenna switch; SPDT switch; antenna terminal; handling power; harmonics characteristics; high-power-handling operation; insertion loss; low-voltage-controlled switch; power transfer characteristics; receiver terminal; switch circuit configuration; transmitter terminal; GSM; Gallium arsenide; Receiving antennas; Resistors; Switched capacitor circuits; Switches; Switching circuits; Transmitters; Transmitting antennas; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1011942

Filename

1011942