A low phase noise signal generation system for Ka-Band P2P applications based on an injection-locked frequency tripler

Author

Cabrera, D. ; Begueret, J.B. ; Deval, Yann ; Tesson, O. ; Gamand, P. ; Mazouffre, O. ; Taris, T.

Author_Institution

IMS Lab., Univ. of Bordeaux, Bordeaux, France

fYear

2014

fDate

Sept. 28 2014-Oct. 1 2014

Firstpage

183

Lastpage

186

Abstract

A signal generation system composed by a subharmonic VCO followed by an injection-locked frequency tripler (ILFT) is designed in a 0.25 μm BiCMOS SiGe:C technology. The ILFT implements a cascoded current-biased common emitter configuration that exploits the second harmonic of the VCO to enhance the efficiency in the generation of the injecting signal responsible for the ILFT locking. At 30.8GHz, the system achieves a phase noise of -112 dBc/Hz at 1 MHz offset. The total current consumption is 38 mA for a supply voltage of 2.5 V.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; carbon; frequency multipliers; millimetre wave oscillators; signal generators; voltage-controlled oscillators; BiCMOS SiGe:C technology; ILFT locking; Ka-ban P2P applications; SiGe:C; cascoded current-biased common emitter configuration; current 38 mA; frequency 1 MHz; frequency 30.8 GHz; injecting signal generation; injection-locked frequency tripler; second harmonic; signal generation system; size 0.25 mum; subharmonic VCO; voltage 2.5 V; BiCMOS integrated circuits; Harmonic analysis; Phase noise; Transistors; Tuning; Voltage-controlled oscillators; frequency tripler; millimeter wave frequency generation; phase noise; subharmonic VCO;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE

Conference_Location

Coronado, CA

Type

conf

DOI

10.1109/BCTM.2014.6981310

Filename

6981310