Evolution of lowest supply voltage and hysteresis phenomena in irradiated analog CMOS switches

Author

Franco, F.J. ; Zong, Y. ; Agapito, J.A. ; Casas-Cubillos, J. ; Rodríguez-Ruiz, M.A.

Author_Institution

Departamento Fisica Aplicada III, Complutense Univ., Madrid, Spain

fYear

2004

fDate

22-22 July 2004

Firstpage

91

Lastpage

95

Abstract

Radiation tests on CMOS analog switches were carried out in order to select the most tolerant device for future use in the cryogenic system of the CERN large hadron collider. After irradiation, the devices showed some interesting changes related to the power supplies: an increase in the lowest supply voltage capable of biasing correctly the devices; some devices cannot work with TTL logic levels. In addition, hysteresis phenomena appear.

Keywords

CMOS analogue integrated circuits; field effect transistor switches; gamma-ray effects; hysteresis; neutron effects; LHC; TID tests; TTL logic levels; device biasing voltage; hysteresis phenomena; irradiated analog CMOS switches; large hadron collider; lowest supply voltage phenomena; neutron fluence; radiation tests; switching threshold voltage shift; total gamma dose; total ionizing dose; CMOS logic circuits; Cryogenics; Hysteresis; Large Hadron Collider; Logic devices; Neutrons; Pulse inverters; Switches; System testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2004 IEEE

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-8697-3

Type

conf

DOI

10.1109/REDW.2004.1352912

Filename

1352912