Modeling dynamic stability of SRAMS in the presence of single event upsets (SEUs)

SRAM yield is very important from an economics viewpoint, because of the extensive use of memory in modern processors and SOCs. Therefore, SRAM stability analysis tools have become essential. SRAM stability analysis based on static noise margin (SNM) often results in pessimistic designs because SNM cannot capture the transient behavior of the noise. Therefore, to improve accuracy, dynamic stability analysis is required. The model presented in this paper performs dynamic stability analysis of an SRAM cell in the presence of an SEU event. The experimental results demonstrate that our model is very accurate, with a critical charge estimation error of 2.5% compared to HSPICE. The runtime of our model is also significantly lower (1200 x lower) than the HSPICE run-time. Thus, our model enables the SRAM designer to quickly and accurately analyze stability during the design phase.