Effects of gamma-ray irradiation on quantum-well semiconductor lasers

Author

Sporea, Dan

Author_Institution

Laser Metrol. & Standardization Lab., Nat. Inst. for Lasers, Plasma & Radiat. Phys., Magurele, Romania

fYear

2004

fDate

22-22 July 2004

Firstpage

137

Lastpage

144

Abstract

Investigations were carried out on three types of commercially available quantum-well semiconductor laser diodes, irradiated by gamma-rays, in order to assess their behavior in ionizing radiation environments. The laser diodes emit in the visible range of the spectrum, with a maximum CW power of 5-8 mW. The diode degradation was evaluated up to the total irradiation dose of 96 Mrad. The optical, electrical and optoelectronic characteristics were studied. The paper describes briefly the measuring set-up, and illustrates the main results.

Keywords

gamma-ray effects; quantum well lasers; 5 to 8 mW; 96 Mrad; diode degradation; electrical characteristics; external quantum efficiency; gamma-ray irradiation effects; ionizing radiation environments; laser diodes; optical characteristics; optoelectronic characteristics; quantum-well semiconductor lasers; responsivity; serial resistance; threshold current; total irradiation dose; visible range emitting diodes; Diode lasers; Fiber lasers; Ionizing radiation; Laser theory; Optical interferometry; Pollution measurement; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 2004 IEEE

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-8697-3

Type

conf

DOI

10.1109/REDW.2004.1352920

Filename

1352920