Towards a complete plasma diagnostic system

Author

Zhao, Dong Wu ; Spanoc, C.

Author_Institution

California Univ., Berkeley, CA, USA

fYear

2001

fDate

2001

Firstpage

137

Lastpage

140

Abstract

Plasma etching signals arising from three different sources are collected and analyzed, including optical emission spectroscopy (OES), RF power fundamental and harmonic information, and machine signals such as power, chamber pressure, temperature, gas flow rate, etc. CF₂ OES lines 275 nm and 321 nm are found to be better than any other signals for poly-etch endpoint detection. In addition, excellent statistical models for wafer state prediction are obtained by linear stepwise regression on all available signals. Finally a data exploration system, based on syntactic analysis, is developed for efficiently browsing the data archive, allowing users to examine the data both qualitatively and quantitatively

Keywords

plasma diagnostics; semiconductor process modelling; sputter etching; statistical analysis; 275 nm; 321 nm; RF power fundamental information; chamber pressure; data exploration system; gas flow rate; linear stepwise regression; machine signals; optical emission spectroscopy; plasma diagnostic system; plasma etching signals; poly-etch endpoint detection; statistical models; syntactic analysis; wafer state prediction; Etching; Harmonic analysis; Information analysis; Plasma applications; Plasma diagnostics; Plasma sources; Plasma temperature; RF signals; Signal analysis; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962933

Filename

962933