DocumentCode
1838915
Title
Review of SiGe process technology and its impact on RFIC design
Author
Das, A. ; Huang, M. ; Mondal, J. ; Kaczman, D. ; Shurboff, C. ; Cosentino, S.
Author_Institution
Motorola Inc., Libertyville, IL, USA
fYear
2002
fDate
3-4 June 2002
Firstpage
325
Lastpage
328
Abstract
Reviews recently published SiGe BiCMOS technologies for RFIC design. Performance and integration trends in SiGe HBTs are discussed. Performance of passive devices, such as an inductor, plays a key role in RF design. We review approaches to realize high Q inductor on a Si substrate. Finally, interaction of HBT performance with design is illustrated through LNA design.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; heterojunction bipolar transistors; inductors; integrated circuit design; semiconductor materials; BiCMOS technologies; HBTs; LNA design; RFIC design; SiGe; high Q inductor; passive devices; process technology; BiCMOS integrated circuits; CMOS technology; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location
Seattle, WA, USA
ISSN
1529-2517
Print_ISBN
0-7803-7246-8
Type
conf
DOI
10.1109/RFIC.2002.1012059
Filename
1012059
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