• DocumentCode
    1839030
  • Title

    Multiple objective APC application for an oxide CMP process in a high volume production environment

  • Author

    Wollstein, Dirk ; Raebiger, Jan ; Lingel, Stefan

  • Author_Institution
    AMD, Dresden, Germany
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    207
  • Lastpage
    210
  • Abstract
    Presents three independent run-to-run APC controllers for the chemical-mechanical polishing (CMP). The controllers are applied to oxide polish processes in AMD´s Fab30 to improve (a) the lot-to-lot variation, (b) to reduce the wafer-to-wafer variation and (c) to increase the wafer uniformity of the post-polish oxide thickness. Since different products and layers are processed on the same tools a method was introduced to compensate device and layer dependencies. The control algorithms were extended to a bi-layered polish process. Significant improvement was achieved for the individual controllers applied in the high volume production environment of Fab30 under the condition of a permanently changing product mix
  • Keywords
    chemical mechanical polishing; integrated circuit technology; process control; AMD´s Fab30; advance process control; bi-layered polish process; chemical-mechanical polishing; high volume production environment; independent run-to-run controllers; layer dependencies; lot-to-lot variation; multiple objective APC application; oxide CMP process; permanently changing product mix; post-polish oxide thickness; wafer uniformity; wafer-to-wafer variation; Application software; Chemical industry; Chemical processes; Chemical products; Communication system control; Electronics industry; Integrated circuit manufacture; Metrology; Production; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Symposium, 2001 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-6731-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2001.962950
  • Filename
    962950