Advanced passive devices for enhanced integrated RF circuit performance

Author

Coolbaugh, D. ; Eshun, E. ; Groves, R. ; Harame, D. ; Johnson, J. ; Hammad, M. ; He, Z. ; Ramachandran, V. ; Stein, K. ; St Onge, S. ; Subbanna, S. ; Wang, D. ; Volant, R. ; Wang, X. ; Watson, K.

Author_Institution

IBM Corp., Essex Junction, VT, USA

fYear

2002

fDate

3-4 June 2002

Firstpage

341

Lastpage

344

Abstract

State of the art passive devices have been developed for optimum RF circuit performance. These devices include a hyperabrupt junction varactor with tunability (Cmax/Cmin) of 3.3, an accumulation mode MOS varactor, high capacitance nitride metal-insulator-metal capacitors, a BEOL TaN resistor and very high Q inductors with a peak Q of 28 at 3.5 GHz. VCO simulations using several of these elements show a significant reduction In VCO gain variation, phase noise, and power consumption.

Keywords

BiCMOS analogue integrated circuits; MIM devices; MMIC oscillators; MOS capacitors; Q-factor; circuit tuning; inductors; phase noise; thin film capacitors; thin film resistors; varactors; voltage-controlled oscillators; 3.5 GHz; BEOL resistor; BiCMOS technologies; VCO simulations; accumulation mode MOS varactor; advanced passive devices; circuit performance; fabrication strategy; gain variation; high capacitance nitride MIM capacitors; hyperabrupt junction varactor; low tolerance metal resistor; monolithic wireless integrated circuits; optimum RF circuit performance; parallel inductors; phase noise; power consumption; thin film resistors; tunability; very high Q inductors; wireless transceivers; Capacitance; Circuit optimization; Circuit simulation; Inductors; MIM capacitors; Phase noise; Radio frequency; Resistors; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012063

Filename

1012063