Effects of elastic modulus on the fracture behavior of low-dielectric constant films

Author

Tsui, Ting Y. ; Griffin, A.J., Jr. ; Jacques, Jeannette ; Fields, Russell ; McKerrow, Andrew J. ; Kraft, Robert

Author_Institution

Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA

fYear

2005

fDate

6-8 June 2005

Firstpage

63

Lastpage

65

Abstract

A model that predicts channel-crack propagation behavior in silica-based low-κ dielectrics (low-κ) was developed. A solid-mechanics theory that governs fracture behavior was used to obtain low-κ material constants. These fracture parameters were used to predict crack behaviors in five low-κ films with distinct elastic moduli. The model developed demonstrates that crack propagation rate is extremely sensitive to modulus, especially when the material is compliant.

Keywords

cracks; dielectric thin films; elastic moduli; fracture mechanics; SiO₂; channel crack propagation rate; compliant materials; crack behavior prediction; dielectric film fracture behavior; elastic modulus effects; low-dielectric constant films; low-k elastic modulus; solid-mechanics theory; Chemicals; Dielectric materials; Dielectric thin films; Instruments; Integrated circuit modeling; Plasma temperature; Residual stresses; Semiconductor films; Silicon; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499924

Filename

1499924