• DocumentCode
    1839587
  • Title

    Electromigration threshold in copper interconnects and consequences on lifetime extrapolations

  • Author

    Ney, D. ; Federspiel, X. ; Girault, V. ; Thomas, O. ; Gergaud, P.

  • Author_Institution
    CR&D labs, STMicroelectronics, Crolles, France
  • fYear
    2005
  • fDate
    6-8 June 2005
  • Firstpage
    105
  • Lastpage
    107
  • Abstract
    Electromigration in interconnects is a major reliability concern for integrated circuits, which leads to aggressive design rules. These rules can be lightened by taking advantage of the Blech effect in extrapolated lifetimes. In the present paper is reported the critical product (jL)c for copper-oxide interconnects measured at 250°C, 300°C and 350°C from electron-migration lifetime tests. The existence of this threshold product implies an increase of n values from Black´s model with decreasing (current density-line length) products. This increase significantly changes the extrapolated lifetime at operating conditions.
  • Keywords
    copper; electromigration; extrapolation; integrated circuit interconnections; integrated circuit reliability; 250 degC; 300 degC; 350 degC; Black parameters; Black´s model; Blech effect; Cu; IC reliability; electromigration lifetime tests; interconnect electromigration threshold; lifetime extrapolations; low current density-length products; threshold product; Copper; Current density; Electrical resistance measurement; Electromigration; Extrapolation; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit reliability; Life testing; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
  • Print_ISBN
    0-7803-8752-X
  • Type

    conf

  • DOI
    10.1109/IITC.2005.1499942
  • Filename
    1499942